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IMPATT Diodes - LTEQ MICROWAVE

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IMPATT Diodes

Millimeter Wave Components
 
IMPATT DIODES CW & PULSE; 35 GHz & 94 GHz
 
 
IMPATT Diodes, CW & Pulse, 35 GHz & 94 GHz, Pulse output power 10-20 Watt
 

 

Advantages :
 
  • High output power, pulse output power 10- 20 Watt
  • Compact size
  • High reliability
  • IMPATT Diodes (Pulse and CW) are waveguide mountable and hermetically sealed
 
 

Pulse IMPATT Diodes

Operating frequency

range, GHz

35

92-96

120-140

Pulse Power, Watt

(pulse duration 100 nsec)

10-20

10

3-5

Breakdown voltage, V

34-40

16

10-12

Pulse current, A

8-15

10-18

10-18

Diode capacitance, pF

10-26

6-8

6-8

Package capacitance, pF

0.2

0.15

0.08

Ruby sleeve dimensions, mm

1.2x0.7x0.4

0.8x0.4x0.2

0.4x0.2x0.15

CW IMPATT Diodes

Operating frequency

range, GHz

30-37

92-96

120-140

Minimum CW power, mW

50-400

50-150

10-30

Breakdown voltage, V

34-42

16-18

13-15

Operating current, mA

80-150

150-200

200-270

Operating voltage, V,  max

10

4

4

Diode capacitance, pF

1.3-2.0

0.7-0.9

0.6-0.8

Package capacitance, pF

0.2

0.12 
0.15

0.08

Ruby sleeve dimensions, mm

1.2x0.7x0.4

0.5x0.2x0.15 
0.8x0.4x0.2

0.4x0.2x0.15

 

 
Insight Product Co. Partial Customer List:
 
NASA;  Jet Propulsion Laboratory; NIST; MIT; Harvard University, Cornell University; UCLA; UCSD,
 
UC-Davis, SUNY-Stony Brook, Argonne National Laboratory, United States Naval Research Laboratory, Los Alamos National Laboratory; Raytheon Corp., Microsemi Corp., ETH-Zurich, Switzerland; SRON Lab for Space Research, Netherlands; Friedrich-Alexander Univeristy at Erlangen-Nurnberg, Germany; Seoul National University, South Korea; Okinawa Institute of Science and Technology, Japan; National Institute of Information and Communications Technology, Japan.
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