Multiplier IMPATT Diodes - LTEQ MICROWAVE

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Multiplier IMPATT Diodes

Microelectronics Components > ACTIVE > Diodes
Multiplier IMPATT Diodes

Part Number

Operation Frequency (GHz)

Output Power CW (mW)

Input Signal Power (mW max)

Frequency Multiplication Factor

Break-down Voltage (V)

Forward Differential Resistance

(Ω) (MAX)

Package

NWX0001

94.5 97.5

2 12

1100

14 18

10 18

2

T06-1

 

Pulse IMPATT Diodes

Operating frequency

range, GHz

35

92-96

120-140

Pulse Power, Watt

(pulse duration 100 nsec)

10-20

10

3-5

Breakdown voltage, V

34-40

16

10-12

Pulse current, A

8-15

10-18

10-18

Diode capacitance, pF

10-26

6-8

6-8

Package capacitance, pF

0.2

0.15

0.08

Ruby sleeve dimensions, mm

1.2x0.7x0.4

0.8x0.4x0.2

0.4x0.2x0.15

CW IMPATT Diodes

Operating frequency

range, GHz

30-37

92-96

120-140

Minimum CW power, mW

50-400

50-150

10-30

Breakdown voltage, V

34-42

16-18

13-15

Operating current, mA

80-150

150-200

200-270

Operating voltage, V,  max

10

4

4

Diode capacitance, pF

1.3-2.0

0.7-0.9

0.6-0.8

Package capacitance, pF

0.2

0.12 
0.15

0.08

Ruby sleeve dimensions, mm

1.2x0.7x0.4

0.5x0.2x0.15 
0.8x0.4x0.2

0.4x0.2x0.15

 

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